Eur. Phys. J. AP
Volume 23, Number 1, July 2003
|Page(s)||41 - 44|
|Section||Semiconductors and Devices|
|Published online||27 June 2003|
Impact of gettering by helium implantation on boron and iron segregation
LMP, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex, France
2 STMicroelectronics, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex, France
Corresponding author: firstname.lastname@example.org
Revised: 7 January 2003
Accepted: 7 April 2003
Published online: 27 June 2003
The use of gettering techniques that can be precisely localized in the component, such as neutral element implantation, has become crucial for power device manufacturing. High-dose helium implantation in silicon with a subsequent annealing induces defects (cavities and dislocations) which are able to getter metallic impurities and interact with dopants. These interactions can become a drawback of this technique. In this work, Si wafers -oriented, p-doped with a concentration in between 6 × 1014 and 8 × 1018 B/cm3, were used. Iron contamination was performed by backside implantation (100 keV and 1012 Fe cm−2). Helium implantation was performed at 40 keV and 5 × 1016 at cm−2 at room temperature and followed by a Furnace Annealing (FA) stage. Secondary Ion Mass Spectrometry (SIMS) was used to study the dopant/metal/cavity layer system. In this paper, we will focus on the cavity layer interactions with both metals and dopant impurities. Our experimental results exhibit a large segregation of both species within the cavity layer that occurs during the annealing stage. Both species segregate simultaneously in helium-implanted samples without interacting one to the other. The number of gettering sites does not limit the trapping reactions.
PACS: 61.72.-y – Defects and impurities in crystals; microstructure / 61.72.Cc – Kinetics of defect formation and annealing / 61.72.Tt – Doping and impurity implantation in germanium and silicon
© EDP Sciences, 2003
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