Eur. Phys. J. AP
Volume 15, Number 2, August 2001
|Page(s)||117 - 121|
|Section||Magnetism, Superconductivity and Related Devices|
|Published online||15 August 2001|
Simulation of 2D quantum effects in ultra-short channel MOSFETs by a finite element method*
Laboratoire de Physique de la Matière (UMR-CNRS 5511), INSA-Lyon,
20 avenue Albert Einstein, 69621 Villeurbanne, France
Corresponding author: email@example.com
Revised: 18 April 2001
Accepted: 27 April 2001
Published online: 15 August 2001
This paper presents a flexible numerical technique which is especially suited to analyze lateral modulation of quantum effects in short channel MOS transistors. We discuss boundary conditions for the Schrödinger equation and the impact of the finite element meshing. We show how channel length shortening alters the sub-band structure, thus giving an evaluation of the limits of a 1D quantum approach.
PACS: 85.30.De – Semiconductor-device characterization, design, and modeling / 02.70.Dh – Finite-element and Galerkin methods
© EDP Sciences, 2001
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