Regular Article

A quantum correction based model for study of quantum confinement effects in nano-scale carbon nanotube field-effect transistor (CNTFET) under inversion condition

Faculty of Engineering and Technology, Multimedia University, Malaysia

^a e-mail: ajay.singh@mmu.edu.my

Received: 31 January 2017
Revised: 23 March 2017
Accepted: 24 March 2017
Published online: 28 April 2017

Abstract

In this paper, quantum correction method has been used to study the quantum confinement effect in carbon nanotube field-effect transistor (CNTFET) instead of solving time consuming coupled Schrödinger-Poisson (SP) equation. The quantum confinement parameter, which depends on the oxide thickness and tube’s diameter, is introduced to take care of quantum effect in the device. An analytical expression for quantum corrected potential is derived after solving Poisson equation under appropriate boundary conditions. A surface potential based compact and simple analytical expression has been proposed to calculate the quantum corrected concentration. The proposed surface potential model holds good for submicron devices in the inversion region. The threshold voltage shift due to quantum effect increases with scaling of oxide thickness, increase in channel concentration and tube’s diameter. The simulated results of the proposed models show a good agreement with numerical results.