| Issue |
Eur. Phys. J. Appl. Phys.
Volume 48, Number 2, November 2009
|
|
|---|---|---|
| Article Number | 20301 | |
| Number of page(s) | 4 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2009156 | |
| Published online | 02 October 2009 | |
https://doi.org/10.1051/epjap/2009156
Remote surface roughness effects on inversion electron density in nano-MOSFET
School of Electronics & Information Engineering, Soochow University, 178
Gan-jiang East Road, Suzhou 215021, P.R. China
Corresponding author: mail_lingfeng@yahoo.com.cn
Received:
21
December
2008
Revised:
1
June
2009
Accepted:
15
July
2009
Published online:
2
October
2009
In this paper the remote surface roughness effects on channel electron density of nano MOSFET is discussed by solving the coupled Schrödinger equation and Poisson equation. The results demonstrate that the remote surface roughness could largely affect the density of inversion channel electron, and the change of electron density by this effect has been found to have approximately linear relationship to the remote surface roughness. This implies that the mobility degradation effect by remote surface roughness scattering can be partially erased for the on-state current.
PACS: 85.30.De – Semiconductor-device characterization, design, and modeling / 85.30.Tv – Field effect devices
© EDP Sciences, 2009
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