Eur. Phys. J. AP
Volume 14, Number 2, May 2001
|Page(s)||127 - 130|
|Section||Magnetism, Superconductivity and Related Devices|
|Published online||15 May 2001|
Effect of substrate doping profile on C−V curves for thin MOS capacitors*
Laboratoire d'Automatique et de Microélectronique (LAM), Université de Reims Champagne
UFR Sciences, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2, France
Corresponding author: email@example.com
Revised: 15 March 2001
Accepted: 15 March 2001
Published online: 15 May 2001
We use a full quantum model of MOS (metal oxide semiconductor) structure to study the influence of a non-uniform doping profile of the substrate on the capacitance-voltage (C−V) behavior of the structure. For different “realistic” doping profiles, simulations are performed and compared to simulations with an uniform doping and to C−V measurements for samples with oxide thickness in the range [2−5 nm] . In each case, we have extracted the oxide thickness that is found to be independent of the doping and the flat-band voltage which can be shifted up to 200 mV regarding the different profiles tested here. Moreover, below about 3 nm, the shape of the C−V simulation is more affected, which shows that the doping profile of the substrate has a great importance for an accurate C−V modeling of ultra-thin MOS structures.
PACS: 85.30.De – Semiconductor-device characterization, design, and modeling / 81.07.-b – Nanoscale materials and structures: fabrication and characterization / 73.40.Ty – Semiconductor-insulator-semiconductor structures
© EDP Sciences, 2001
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