Eur. Phys. J. AP
Volume 17, Number 1, January 2002
|Page(s)||35 - 39|
|Section||Magnetism, Superconductivity and Related Devices|
|Published online||15 January 2002|
A spectroscopic charge pumping model in spice for the low dimensional MOSFET's
Institute of Electronics, University of Bejaia, 06000 Bejaia, Algeria
Corresponding author: email@example.com
Revised: 20 July 2001
Accepted: 20 October 2001
Published online: 15 January 2002
We have simulated the experimental spectroscopic charge pumping technique by the implementation of a model in the electrical simulator SPICE3F4. This model takes into account the temperature effect on the geometrical and electrical parameters of the studied transistor. The simulated results are in a good agreement with recent and different experimental results.
PACS: 73.20.-r – Electron states at surfaces and interfaces / 73.20.At – Surface states, band structure, electron density of states / 85.30.De – Semiconductor-device characterization, design, and modeling
© EDP Sciences, 2002
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