| Issue |
Eur. Phys. J. AP
Volume 14, Number 2, May 2001
|
|
|---|---|---|
| Page(s) | 121 - 125 | |
| DOI | https://doi.org/10.1051/epjap:2001146 | |
| Published online | 15 May 2001 | |
https://doi.org/10.1051/epjap:2001146
Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene
1
Faculté des Sciences de Bizerte, 7021 Jarzouna-Bizerte, Tunisia
2
Laboratoire de Physique de la Matière Condensée, Groupe Matériaux Moléculaires et Polymères,
Campus Universitaire, 1060 Tunis, Tunisia
3
Laboratoire des Matériaux Moléculaires, CNRS, 2 rue Henry-Dunant, 94320 Thiais, France
4
Groupe de Physique des Solides, Université Paris 7, Denis Diderot, 75251 Paris Cedex 05, France
Corresponding author: Ramzi.Bourguiga@fsb.rnu.tn
Received:
3
May
2000
Revised:
17
November
2000
Accepted:
17
November
2000
Published online: 15 May 2001
Metal-Insulator-Semiconductor Field-Effect-Transistors based on Dihexyl- quaterthiophene (DH4T), has been realized. Unlike conventional MISFET, these devices work through the modulation of an accumulation layer at the semiconductor-insulator interface. An analytical model that describes the operation of organic thin-film-transistors based on a simple trap distribution, with a single shallow trap level located between the valence-band edge and the Fermi level, has been used to determine some microscopic parameters such as the mobility, the density of traps and the corresponding level of traps.
PACS: 85.30.-z – Semiconductor devices / 73.40.-c – Electronic transport in interface structures
© EDP Sciences, 2001
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