Eur. Phys. J. AP
Volume 14, Number 2, May 2001
|Page(s)||121 - 125|
|Published online||15 May 2001|
Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene
Faculté des Sciences de Bizerte, 7021 Jarzouna-Bizerte, Tunisia
2 Laboratoire de Physique de la Matière Condensée, Groupe Matériaux Moléculaires et Polymères, Campus Universitaire, 1060 Tunis, Tunisia
3 Laboratoire des Matériaux Moléculaires, CNRS, 2 rue Henry-Dunant, 94320 Thiais, France
4 Groupe de Physique des Solides, Université Paris 7, Denis Diderot, 75251 Paris Cedex 05, France
Corresponding author: Ramzi.Bourguiga@fsb.rnu.tn
Revised: 17 November 2000
Accepted: 17 November 2000
Published online: 15 May 2001
Metal-Insulator-Semiconductor Field-Effect-Transistors based on Dihexyl- quaterthiophene (DH4T), has been realized. Unlike conventional MISFET, these devices work through the modulation of an accumulation layer at the semiconductor-insulator interface. An analytical model that describes the operation of organic thin-film-transistors based on a simple trap distribution, with a single shallow trap level located between the valence-band edge and the Fermi level, has been used to determine some microscopic parameters such as the mobility, the density of traps and the corresponding level of traps.
PACS: 85.30.-z – Semiconductor devices / 73.40.-c – Electronic transport in interface structures
© EDP Sciences, 2001
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