Microstructure and morphology evolution in chemical solution deposited semiconductor films: 2. PbSe on As face of GaAs(111)

Department of Materials Engineering and the Ilse Katz Center for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel

Corresponding author: ygolan@bgumail.bgu.ac.il

Received: 6 January 2004
Revised: 21 March 2004
Accepted: 30 March 2004
Published online: 25 June 2004

Abstract

Nanocrystalline PbSe films were grown on GaAs(100) and on the As face of GaAs(111) substrates using chemical solution deposition. The microstructure of the films was found to be strongly affected by the deposition temperature over a surprisingly narrow temperature range. In PbSe deposited on GaAs(100), gradual increase in crystallite size and transition to 111 texture were obtained with increasing temperature. In contrast with PbSe deposited on GaAs(100), the 111 texture in PbSe on GaAs(111) dominated throughout the deposition temperature range. Since temperature directly affects reaction rate, the temperature-dependent morphological changes observed in this work occur primarily due to increasing sample thickness.