Issue |
Eur. Phys. J. Appl. Phys.
Volume 28, Number 1, October 2004
|
|
---|---|---|
Page(s) | 43 - 50 | |
Section | Surfaces, Interfaces and Films | |
DOI | https://doi.org/10.1051/epjap:2004161 | |
Published online | 25 June 2004 |
https://doi.org/10.1051/epjap:2004161
Molecular dynamics simulations of palladium cluster growth on flat and rough graphite surfaces
1
Groupe de Recherches sur l'Énergétique des Milieux Ionisés,
UMR6606 CNRS-Université d'Orléans, BP 6744, 45067 Orléans, Cedex 2, France
2
Centre de Ressources Informatiques de Haute-Normandie, 745
avenue de l'Université, 76800 Saint Étienne du Rouvray, France
Corresponding authors: pascal.brault@univ-orleans.fr guy.moebs@crihan.fr
Received:
17
December
2003
Revised:
18
March
2004
Accepted:
30
March
2004
Published online:
25
June
2004
Parallel Molecular Dynamics simulations are conducted for describing growth on surfaces with different kind of roughness: a perfect ordered crystalline flat graphite surface, a disordered rough graphite surface and flat surface with an ordered localized defect. It is shown that disordered rough surfaces results in a first step to reduction of the sticking coefficient, increased cluster density, size reduction. Structure of the clusters shows the disappearance of the octahedral site characteristic of compact structure. Isolated defect induces cluster-cluster interactions that modify growth compared to perfect flat surface. Kinetic study of growth shows power law tαz evolution for low impinging atom kinetic energy. Increasing kinetic energy, on all kinds of surfaces, results in a slightly larger exponent z, but fitting by an exponential function is quite good too. Lattice expansion is favoured on rough surfaces but increasing incoming atom kinetic energy weakens this effect.
PACS: 81.15.Cd – Deposition by sputtering / 81.15.Aa – Theory and models of thin film growth / 68.55.Ac – Nucleation and growth: microscopic aspects
© EDP Sciences, 2004
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