| Issue |
Eur. Phys. J. Appl. Phys.
Volume 46, Number 2, May 2009
|
|
|---|---|---|
| Article Number | 20401 | |
| Number of page(s) | 6 | |
| Section | Physics of Organic Materials and Devices | |
| DOI | https://doi.org/10.1051/epjap/2009034 | |
| Published online | 08 April 2009 | |
https://doi.org/10.1051/epjap/2009034
Electrical characterizations of SnPc/p-GaAs heterojunction
1
Physics department, Faculty of Education, Ain Shams University, Roxy 11757, Cairo, Egypt
2
Physics Department, Faculty of Science, King Abdul Aziz University, Jeddah, Saudi Arabia
Corresponding author: prof_nahhas@yahoo.com
Received:
2
August
2008
Revised:
31
December
2008
Accepted:
15
January
2009
Published online:
8
April
2009
Current voltage and capacitance-voltage characteristics for SnPc thin film with ~105 nm thickness; deposited on p-GaAs single crystals have been investigated. The dark current voltage-characteristics of the prepared junction have been investigated in a temperature range from ~303 to 393 K. The obtained results showed rectification behaviour. At low forward and reverse bias, the current was found to be limited by the thermoionic emission, while at high forward voltage, space charge limited current dominated by a single trap level of 0.22 eV. The analysis of the dark capacitance voltage characteristics indicated that the carrier concentration is 1.4×1014 cm-3 with a built in voltage ~0.55 eV.
PACS: 81.15.Fg – Laser deposition / 73.40.-c – Electronic transport in interface structures / 73.50.Pz – Photoconduction and photovoltaic effects
© EDP Sciences, 2009
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