Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Localization and Physical Analysis of Defects in Degraded Power HEMT p-GaN Transistors Stressed with DC Voltage Surge and Voltage with Switching Stress

Lucien Ghizzo, Gérald Guibaud, Christophe De Nardi, François Jamin, Vanessa Chazal, David Trémouilles, Richard Monflier, Frédéric Richardeau, Guillaume Bascoul and Manuel González Sentís
Journal of Failure Analysis and Prevention 24 (5) 2221 (2024)
https://doi.org/10.1007/s11668-024-02038-x

Characterization of dislocations at the emission site by emission microscopy in GaN p–n diodes

Yukari Ishikawa, Yoshihiro Sugawara, Daisaku Yokoe, Koji Sato, Yongzhao Yao, Kenta Watanabe and Takashi Okawa
Journal of Materials Science 58 (22) 9221 (2023)
https://doi.org/10.1007/s10853-023-08596-z

Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices

Alexander S. Chang, Bingjun Li, Sizhen Wang, Sam Frisone, Rachel S. Goldman, Jung Han and Lincoln J. Lauhon
Nano Energy 102 107689 (2022)
https://doi.org/10.1016/j.nanoen.2022.107689

CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III–V Materials Defects

M. Porti, V. Iglesias, Q. Wu, et al.
IEEE Transactions on Nanotechnology 15 (6) 986 (2016)
https://doi.org/10.1109/TNANO.2016.2619488

Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements

C. Couso, V. Iglesias, M. Porti, et al.
IEEE Electron Device Letters 37 (5) 640 (2016)
https://doi.org/10.1109/LED.2016.2537051

Vacancy-type defects introduced by plastic deformation of GaN studied using monoenergetic positron beams

Akira Uedono, Ichiro Yonenaga, Tomohito Watanabe, Shogo Kimura, Nagayasu Oshima, Ryoichi Suzuki, Shoji Ishibashi and Yutaka Ohno
Journal of Applied Physics 114 (8) (2013)
https://doi.org/10.1063/1.4819798