Analysis of superconducting silicon epilayers by atom probe tomography: composition and evaporation field | The European Physical Journal Applied Physics (EPJ AP)

Special Issue on ‘Advances in Renewable Energies, Materials and Technology’, edited by Laurene Tetard, Hamid Oughaddou, Abdelkader Kara, Yannick Dappe and Nabil Rochdi

Open Access

Fig. 1

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Reconstruction of a 70 × 60 × 180 nm³ volume in heavily boron-doped silicon epilayers (prepared by GILD) analyzed by APT. Each pots corresponds to an atom.

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