| Issue |
Eur. Phys. J. Appl. Phys.
Volume 98, 2023
Special Issue on ‘Advances in Renewable Energies, Materials and Technology’, edited by Laurene Tetard, Hamid Oughaddou, Abdelkader Kara, Yannick Dappe and Nabil Rochdi
|
|
|---|---|---|
| Article Number | 40 | |
| Number of page(s) | 8 | |
| Section | Thin Films | |
| DOI | https://doi.org/10.1051/epjap/2023230018 | |
| Published online | 09 June 2023 | |
https://doi.org/10.1051/epjap/2023230018
Regular Article
Analysis of superconducting silicon epilayers by atom probe tomography: composition and evaporation field
1
IM2NP, CNRS (UMR 7334), Aix-Marseille Université, FST de St Jérôme, 130007 Marseille, France
2
Université Grenoble Alpes, CNRS, CERMAV, 601 Rue de la Chimie, 38000 Grenoble, France
3
CEA, INAC, UMR-E9001/UJF, LATEQS, 38000 Grenoble, France
4
Institut d'Electronique Fondamentale, CNRS and Université Paris Sud, 91220 Orsay, France
5
Laboratory of Sciences and Professions of the Engineer, Materials and Processes Department ENSAM-Meknes Marjane II, Moulay Ismail University, Meknes, Morocco
* e-mail: khalid.hoummada@univ-amu.fr
Received:
25
January
2023
Received in final form:
11
April
2023
Accepted:
25
April
2023
Published online: 9 June 2023
Three dimensional distributions of boron atoms incorporated into crystalline silicon (3-9 at.% of boron) well above the solubility limit are measured by atom probe tomography (APT). Samples have been prepared either by gas immersion laser doping (GILD) or by implantation followed by laser annealing (Pulsed Laser Induced Epitaxy: PLIE). GILD and PLIE silicon samples show superconducting properties at low temperatures due to the achieved their high doping level achieved. In both cases, boron atoms are found to be randomly distributed throughout the silicon as revealed by statistical distribution analysis. No clusters or precipitates are detected, which may be related to the high recrystallization rate of the Si:B alloy. A sharp 2D interface between the doped silicon region and the undoped substrate is also observed, characterizing a Si:B/Si epitaxy. Finally, the variation of the evaporation field is investigated by considering either the silicon charge state ratio or the variation of the total applied voltage during the analysis of the Si:B layer and silicon.
© K. Hoummada et al., Published by EDP Sciences, 2023
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