Eur. Phys. J. Appl. Phys.
Volume 68, Number 1, October 2014
|Number of page(s)||12|
|Section||Semiconductors and Devices|
|Published online||26 September 2014|
Atom probe tomography in nanoelectronics
Normandie University, Groupe de Physique des Matériaux, UMR CNRS 6634, ESP CARNOT Institute, 76800
St. Etienne du Rouvray Cedex, France
a e-mail: email@example.com
Revised: 16 July 2014
Accepted: 24 July 2014
Published online: 26 September 2014
The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants and nanostructural features that are vital for nanoelectronics. Because of trajectory aberrations, APT images are subjected to distortions and local composition at the nm scale may either be biased. Procedures accounting for these effects were applied so that to correct images.
© EDP Sciences, 2014
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