Regular Article

Impact of conduction band non-parabolicity and dielectric mismatch on photoionization cross section of donor bound polaron in spherical GaN/InN core-shell nanoparticle^★

¹ Laboratory of Materials Physics & Subatomics, Department of Physics, Faculty of Science, Ibn Tofail University, BP. 242, 14000, Kenitra, Morocco
² Group of Optoelectronic of Semiconductors and Nanomaterials, ENSAM de Rabat, Mohammed V University in Rabat, Rabat, Morocco
³ Centre Régional des Métiers de l'Education et de Formation (CRMEF), Tanger 90060, Morocco
⁴ Laboratory of Materials and Valorizations of Natural Resources, University Abdelmalek Essaadi, Tangier, Morocco

^* e-mail: abdelali.talbi@uit.ac.ma

Received: 15 July 2020
Received in final form: 10 October 2020
Accepted: 17 November 2020
Published online: 6 January 2021

Abstract

Understanding the behavior of single dopant in semiconductors is a challenge to attain a high control on optoelectronic devices. Based on the fact that the external perturbations have an important impact on properties of doped nanocrystals, we have studied the simultaneous effects of phonons and conduction band non-parabolicity combined to dielectric mismatch and donor position on the photoionization cross section of an off-center donor in spherical GaN/InN core-shell quantum dots. The calculations were carried out within the framework of the effective-mass approximation and the eigenvalues equation has been solved using the Ritz variational method. The examination of the photoionization cross section, corresponding to the first donor energy level and the non-parabolic conduction band optical transition, shows clearly that the existence of non-parabolicity band or dielectric environment causes a blue shift of resonance peaks while the existence of phonon red shift them with a non-neglected variations in their intensity. The donor position has also an important effect on peaks position and amplitude.