| Issue |
Eur. Phys. J. Appl. Phys.
Volume 90, Number 1, April 2020
|
|
|---|---|---|
| Article Number | 10102 | |
| Number of page(s) | 12 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2020190332 | |
| Published online | 26 June 2020 | |
https://doi.org/10.1051/epjap/2020190332
Regular Article
Electrical and thermal conductivity of heavily doped n-type silicon★
Department of Physics, Arba Minch University, P.O. Box 21, Arba Minch, Ethiopia
* e-mail: mulugeta1970@gmail.com
Received:
18
November
2019
Received in final form:
18
February
2020
Accepted:
17
April
2020
Published online: 26 June 2020
In this paper electrical and thermal conductivity coefficients of heavily doped n-Silicon have been derived based on parabolic and modified density of states having band tails. The derivation uses Boltzmann transport equation with relaxation time arising from ionized impurity scattering mechanism as a dominant scattering mechanism compared to the phonon scattering mechanism where the calculations are made at room temperature. Note that semi-classical and quantum mechanics treatments are employed during discussion of scattering mechanisms and calculation of transport coefficients for parabolic and modified density of states having band tails considerations. There is significant variation of electrical and thermal conductivity as well as Weidman-Franz ratio as much as 30%, 101.86%, and 0.66% respectively.
Supplementary material is available in electronic form at https://www.epjap.org/10.1051/epjap/2020190332
© EDP Sciences, 2020
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