Eur. Phys. J. Appl. Phys.
Volume 84, Number 2, November 2018
|Number of page(s)||8|
|Section||Semiconductors and Devices|
|Published online||14 January 2019|
The influence of a strong infrared radiation field on the conductance properties of doped semiconductors
Wigner Research Centre for Physics of the Hungarian Academy of Sciences, Konkoly − Thege Miklós út 29 - 33, H-1121 Budapest, Hungary
2 ELI-HU Nonprofit Kft., Dugonics Tér 13, H-6720 Szeged, Hungary
3 University of Pécs, Ifjúság útja 6, H-7624, Pécs, Hungary
* e-mail: firstname.lastname@example.org
Received in final form: 17 October 2018
Accepted: 6 November 2018
Published online: 14 January 2019
This work presents an analytic angular differential cross section formula for the electromagnetic radiation field-assisted electron scattering on impurities in semiconductors. These impurities are approximated with various model potentials. The scattered electrons are described with the well-known Volkov wave function, which has been used to describe strong laser field matter interaction for more than half a century, which exactly describes the interaction of the electron with the external oscillating field. These calculations show that the electron conductance in a semiconductor could be enhanced by an order of magnitude if an infrared electromagnetic field is present with 1011 W/cm2 < I < 1013 W/cm2 intensity.
© EDP Sciences, 2018
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