Eur. Phys. J. Appl. Phys.
Volume 82, Number 2, May 2018
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||03 August 2018|
Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices
Department of Physics, Faculty of Sciences, Mugla Sıtkı Koçman University,
2 Department of Physics, Faculty of Sciences and Arts, University of Batman, 72060 Batman, Turkey
* e-mail: firstname.lastname@example.org
Received in final form: 19 April 2018
Accepted: 18 May 2018
Published online: 3 August 2018
The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I–V and C–V measurements. It has been determined that the device has a high rectification coefficient and current transport is dominated by the thermionic emission. The serial resistance value is calculated at 92 ohms with two different approaches. Serial resistance effects were also found to be effective in C–V and G–V measurements. The different barrier heights from the I–V and C–V measurements indicate possible interface and trap states or barrier inhomogeneities.
© EDP Sciences, 2018
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