| Issue |
Eur. Phys. J. Appl. Phys.
Volume 82, Number 2, May 2018
|
|
|---|---|---|
| Article Number | 20101 | |
| Number of page(s) | 5 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2018180004 | |
| Published online | 03 August 2018 | |
https://doi.org/10.1051/epjap/2018180004
Regular Article
Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices
1
Department of Physics, Faculty of Sciences, Mugla Sıtkı Koçman University,
48000
Mugla, Turkey
2
Department of Physics, Faculty of Sciences and Arts, University of Batman,
72060
Batman, Turkey
* e-mail: sadanozden@gmail.com
Received:
3
January
2018
Received in final form:
19
April
2018
Accepted:
18
May
2018
Published online: 3 August 2018
The room temperature electrical characteristics of the organic Au/mTPP/p-Si device fabricated by spin coating method were investigated with I–V and C–V measurements. It has been determined that the device has a high rectification coefficient and current transport is dominated by the thermionic emission. The serial resistance value is calculated at 92 ohms with two different approaches. Serial resistance effects were also found to be effective in C–V and G–V measurements. The different barrier heights from the I–V and C–V measurements indicate possible interface and trap states or barrier inhomogeneities.
© EDP Sciences, 2018
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