Issue |
Eur. Phys. J. Appl. Phys.
Volume 80, Number 3, December 2017
|
|
---|---|---|
Article Number | 30101 | |
Number of page(s) | 4 | |
Section | Semiconductors and Devices | |
DOI | https://doi.org/10.1051/epjap/2017170262 | |
Published online | 20 November 2017 |
https://doi.org/10.1051/epjap/2017170262
Research Article
The improvement of phase-change properties on Ge2Sb2Te5 using the superlattice-like structure
School of Mathematics and Physics, Jiangsu University of Technology,
Changzhou
213001, PR China
* e-mails: zhengphy@163.com; pcram@jsut.edu.cn
Received:
23
July
2017
Received in final form:
9
October
2017
Accepted:
24
October
2017
Published online: 20 November 2017
Ge2Sb2Te5 (GST)/Ge superlattice-like (SLL) films are investigated in the study. Reflection spectra measurements with polarized excitations and atomic force microscopy are carried out to investigate phase-change properties. Because of the Ge cladding films, GST phase-change properties could be improved. The thicker Ge cladding film is believed could lead to a relatively larger grain size. GST phase-change behaviors in the films can be adjusted by changing the layer thickness. We found the [GST(5 nm)/Ge(5 nm)]10 SLL film has the higher crystallization temperature, faster phase change speed, better thermal stability and relatively smooth surface. The GST/Ge SLL films may have the potential for commercial use.
© EDP Sciences, 2017
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