Eur. Phys. J. Appl. Phys.
Volume 70, Number 1, April 2015
|Number of page(s)||4|
|Section||Semiconductors and Devices|
|Published online||21 April 2015|
A new drain current model for amorphous IGZO thin film transistors
School of Electronic and Information Engineering, South China University of Technology, Guangzhou
510640, P.R. China
a e-mail: email@example.com
Revised: 3 March 2015
Accepted: 19 March 2015
Published online: 21 April 2015
Based on the conduction mechanisms of amorphous InGaZnO (a-IGZO) thin film transistors, generalized equations are derived which permit the determination of drain current characteristics. A geometry-independent definition for field effect mobility considering the ratio of free-to-trapped carriers is introduced, which conveys the properties of the active semiconducting layer. It is suggested that a drain current model that includes different charge transports gives a consistent and accurate description of the electrical behavior. The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin-film circuits.
© EDP Sciences, 2015
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