Eur. Phys. J. Appl. Phys.
Volume 70, Number 1, April 2015
|Number of page(s)||4|
|Section||Semiconductors and Devices|
|Published online||21 April 2015|
A new drain current model for amorphous IGZO thin film transistors
School of Electronic and Information Engineering, South China University of Technology, Guangzhou
510640, P.R. China
a e-mail: firstname.lastname@example.org
Revised: 3 March 2015
Accepted: 19 March 2015
Published online: 21 April 2015
Based on the conduction mechanisms of amorphous InGaZnO (a-IGZO) thin film transistors, generalized equations are derived which permit the determination of drain current characteristics. A geometry-independent definition for field effect mobility considering the ratio of free-to-trapped carriers is introduced, which conveys the properties of the active semiconducting layer. It is suggested that a drain current model that includes different charge transports gives a consistent and accurate description of the electrical behavior. The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin-film circuits.
© EDP Sciences, 2015
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.