Eur. Phys. J. Appl. Phys.
Volume 69, Number 1, January 2015
|Number of page(s)||7|
|Section||Physics of Organic Materials and Devices|
|Published online||07 January 2015|
Modeling of ambipolar charge transport in all-organic ferroelectric field-effect transistor
School of Materials Science and Engineering, University of Jinan,
250022, P.R. China
2 Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, P.R. China
a e-mail: firstname.lastname@example.org
Accepted: 10 April 2014
Published online: 7 January 2015
A model describing charge transport in disordered ambipolar all-organic-ferroelectric field-effect transistors (AoFeFETs) is proposed by examining the interaction between semiconductor charge and ferroelectric polarization. A density dependent variable-range hopping charge transport in ambipolar organic semiconductors and an analytical ferroelectric-polarization Miller-Lue expression were adopted in this model. An effective potential comprising the threshold voltage and channel potential Vch, has been used to consider the possible effects due to the nonuniform field distribution along the device-channel. The results show it can be used to model the transfer and output characteristic in AoFeFETs via a single formulation. An excellent agreement between theory and experiment is observed over a wide range of biasing regimes.
© EDP Sciences, 2015
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