Modeling of ambipolar charge transport in all-organic ferroelectric field-effect transistor

¹ School of Materials Science and Engineering, University of Jinan, Jinan 250022, P.R. China
² Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, P.R. China

^a e-mail: mse_yangf@ujn.edu.cn

Received: 21 November 2013
Accepted: 10 April 2014
Published online: 7 January 2015

Abstract

A model describing charge transport in disordered ambipolar all-organic-ferroelectric field-effect transistors (AoFeFETs) is proposed by examining the interaction between semiconductor charge and ferroelectric polarization. A density dependent variable-range hopping charge transport in ambipolar organic semiconductors and an analytical ferroelectric-polarization Miller-Lue expression were adopted in this model. An effective potential comprising the threshold voltage and channel potential V_ch, has been used to consider the possible effects due to the nonuniform field distribution along the device-channel. The results show it can be used to model the transfer and output characteristic in AoFeFETs via a single formulation. An excellent agreement between theory and experiment is observed over a wide range of biasing regimes.