Issue |
Eur. Phys. J. Appl. Phys.
Volume 59, Number 2, August 2012
|
|
---|---|---|
Article Number | 20201 | |
Number of page(s) | 8 | |
Section | Physics of Organic Materials and Devices | |
DOI | https://doi.org/10.1051/epjap/2012110429 | |
Published online | 03 September 2012 |
https://doi.org/10.1051/epjap/2012110429
Analytical model for charge transport in organic thin-film transistors: application to polythiophene
Laboratoire de physique des matériaux: structure et propriétés, groupe Physique des Composants et Dispositifs Nanométriques, Faculté des sciences de Bizerte, 7021 Jarzouna-Bizerte, Tunisia
a e-mail: zoraisana@yahoo.fr
Received:
10
November
2011
Revised:
26
April
2012
Accepted:
16
July
2012
Published online:
3
September
2012
The electronic charge transport in active layer of organic thin-film transistor (OTFT) based on conductor polythiophene (sexithiophene (6T) and octithiophene (8T)) was studied. A mathematical model is presented based on the variable range hopping (VRH) transport theory. Using the VRH model the expression of source-drain current is established for two regimes: linear regime for drain bias VD = −2 V and saturation regime for VD = −30 V at low temperature and at room temperature. All electrical key parameters of OTFTs based on polythiophene have been extracted. A good agreement between theoretical model and experimental measurement of electrical characteristics is obtained for both temperature ranges: low temperature and room temperature.
© EDP Sciences, 2012
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