Eur. Phys. J. Appl. Phys.
Volume 64, Number 1, October 2013
|Number of page(s)||4|
|Published online||25 October 2013|
XPS and cathodoluminescence studies of HfO2, Sc2O3 and (HfO2)1-x(Sc2O3)x films
Boreskov Institute of Catalysis, Lavrentiev ave. 5, 630090
Novosibirsk, Russian Federation
2 Ioffe Physical Technical Institute, Polytechnicheskaya st. 26, 194021 Saint Petersburg, Russian Federation
3 Nikolaev Institute of Inorganic Chemistry, Lavrentiev ave. 3, 630090 Novosibirsk, Russian Federation
4 Rzhanov Institute of Semiconductor Physics, Lavrentiev ave. 13, 630090 Novosibirsk, Russian Federation
a e-mail: email@example.com
Revised: 16 May 2013
Accepted: 5 September 2013
Published online: 25 October 2013
X-ray photoelectron spectroscopy (XPS) and cathodoluminescence (CL) method have been employed to study the chemical composition and the oxygen vacancy concentration of HfO2, Sc2 O3 and (HfO2)1−x(Sc2O3)x films. It was found that the increase of Sc content led to monotonic decreasing the Hf4f7/2 and Sc2p3/2 binding energies indicating to form solid solution (HfO2)1−x(Sc2O3)x. All the samples characterized by the intensive CL spectra with maximum around 3 eV which originated due to some radiative recombination emission caused by oxygen deficiency. The concentration of oxygen vacancy in the Sc-doped HfO2 is sensitive to the Sc content and as a result the intensity of CL spectra of (HfO2)1−x(Sc2O3)x is lower that those of pure HfO2 and Sc2O3.
© EDP Sciences, 2013
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