Plasma, Discharges and Processes

Argon gas concentration effects on nanostructured molybdenum nitride layer growth using 100 Hz pulsed dc glow discharge 20801

U. Ikhlaq, R. Ahmad, S. Saleem, M.S. Shah, Umm-i-Kalsoom, N. Khan and N. Khalid

Published online: 17 August 2012

DOI: https://doi.org/10.1051/epjap/2012120173

• Abstract
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Nanomaterials and Nanotechnologies

Higher water splitting hydrogen generation rate for single crystalline anatase phase of TiO₂ nanotube arrays 20403

C.W. Lai and S. Sreekantana

Published online: 03 September 2012

DOI: https://doi.org/10.1051/epjap/2012120250

• Abstract
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Visible light photoelectrochemical response of copper deposited titanium dioxide nanotubes 20402

C.W. Lai and S. Sreekantan

Published online: 17 August 2012

DOI: https://doi.org/10.1051/epjap/2012120009

• Abstract
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Magnetoelectric characteristics of Dy_2.8Sr_0.2Fe₅O₁₂ garnet (DySrIG) 20401

M.A. Ahmed, S.T. Bishay and S.I. El-dek

Published online: 17 August 2012

DOI: https://doi.org/10.1051/epjap/2012110465

• Abstract
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Thin Films

Correlations of plasma parameters and properties of magnetron sputtered TiN films 20302

N. Kumari, P.S. Das, N.K. Joshi and P.K. Barhai

Published online: 03 September 2012

DOI: https://doi.org/10.1051/epjap/2012120108

• Abstract
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The application of laser-induced damage spot size effect for laser conditioning mechanism 20301

X. Li, L.-B. Kong, Z.-L. Hou and J.-D. Shao

Published online: 17 August 2012

DOI: https://doi.org/10.1051/epjap/2012110456

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Physics of Organic Materials and Devices

Analytical model for charge transport in organic thin-film transistors: application to polythiophene 20201

S. Zorai and R. Bourguiga

Published online: 03 September 2012

DOI: https://doi.org/10.1051/epjap/2012110429

• Abstract
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Semiconductors and Devices

Theoretical prediction of some physical parameters in glassy Se₈₀Te₂₀ and glassy Se₈₀Te₁₀M₁₀ (M = Cd, In, Sb) alloys 20102

N. Chandel and N. Mehta

Published online: 03 September 2012

DOI: https://doi.org/10.1051/epjap/2012120249

• Abstract
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Preparation and characterization of Au/n-GaSe₄/p-Si/Al Schottky-type thin film heterojunctions 20101

M.M. El-Nahass, I.T. Zedan and A.A. Atta

Published online: 17 August 2012

DOI: https://doi.org/10.1051/epjap/2012120150

• Abstract
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