| Issue |
Eur. Phys. J. Appl. Phys.
Volume 58, Number 1, April 2012
|
|
|---|---|---|
| Article Number | 10103 | |
| Number of page(s) | 4 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2012110421 | |
| Published online | 23 April 2012 | |
https://doi.org/10.1051/epjap/2012110421
High carrier injection for all-silicon laser
1
PROMES-ELIAUS, Laboratoire Euro-Méditerranéen Sciences et Technologies, Université de Perpignan Via Domitia, 52 avenue Paul Alduy, 66860 Perpignan Cedex, France
2
Department of Physics, University A. Mira, Béjaïa, Algeria
Received:
2
November
2011
Accepted:
12
March
2012
Published online:
23
April
2012
This work provides a novel approach for enhanced radiative transitions in silicon microelectronics devices. A process based on hot carrier injection is monitored for the creation of a low dimensions defect layer near the emitter-base interface of bipolar transistors. New energy levels are induced together with a potential barrier. Carrier confinement is correlated with the potential barrier height. The increase of light emission is related to high injection effects in the junction. Results present an advance toward Si-based optoelectronic devices.
© The author(s) 2012
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