| Issue |
Eur. Phys. J. Appl. Phys.
Volume 58, Number 1, April 2012
|
|
|---|---|---|
| Article Number | 10102 | |
| Number of page(s) | 4 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2012120004 | |
| Published online | 29 March 2012 | |
https://doi.org/10.1051/epjap/2012120004
Raman study on dislocation in high Al content AlxGa1−xN
1
Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China
2
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, P.R. China
3
ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, PO Box 912, Beijing 100083, P.R. China
a
e-mail: xpan@semi.ac.cn
Received:
4
January
2012
Revised:
29
January
2012
Accepted:
12
March
2012
Published online:
29
March
2012
The high Al content AlGaN epilayers have been obtained by metalorganic chemical vapor deposition (MOCVD), and the optical property has been investigated by photoluminescence (PL) spectroscopy. Longitudinal-optic (LO) phonon mode has been studied by Raman scattering. Further analysis shows that the edge dislocation is an important factor influencing optical quality of AlGaN epilayers, and it also shows that the correlation between the A1 (LO) polar modes and the edge dislocation is intensive, which may be expected to become a characterization method of the related crystal defects.
© EDP Sciences, 2012
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