Eur. Phys. J. Appl. Phys.
Volume 56, Number 2, November 2011Topical Issue: 18th International Colloquium on Plasma Processes (CIP 2011)
|Number of page(s)||6|
|Published online||28 October 2011|
Towards control of plasma-induced surface roughness: simultaneous to plasma etching deposition*
Institute of Microelectronics, National Center for Scientific Research “Demokritos’’, Athens, Greece
a e-mail: email@example.com
Revised: 13 July 2011
Accepted: 2 August 2011
Published online: 28 October 2011
The potential of simultaneous to etching deposition for surface roughness control is investigated with a stochastic modeling framework for morphology evolution in (2+1) d. It is predicted that ion-driven etching under simultaneous deposition of etch-inhibitors (e.g., impurities coming from the wafer surroundings, the reactor walls, or the plasma bulk) not only induces roughness formation with a linear dependence on time, but can also induce periodic dots on the surface. The surface roughness can be controlled by regulating the amount of etch-inhibitors.
© EDP Sciences, 2011
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