Eur. Phys. J. Appl. Phys.
Volume 55, Number 3, September 2011
|Number of page(s)||8|
|Section||Instrumentation and Metrology|
|Published online||18 August 2011|
Advanced backside sample preparation for multi-technique surface analysis
CEA-Leti, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
2 CEA-INAC/UJF-Grenoble 1 UMR-E, SP2M, LEMMA, Minatec, Grenoble Cedex 38054, France
3 LTM-CNRS/CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
4 ST Microelectronics, 850 rue de Jean Monnet, 38926 Crolles, France
a e-mail: firstname.lastname@example.org
Accepted: 10 June 2011
Published online: 18 August 2011
Backside sample preparation is a well-known method to help circumvent undesired effects and artifacts in the analysis of a sample or device structure. However it remains challenging in the case of thin layers analysis since only a fraction oRelax;f the original sample must remain while removing most or all of the substrate and maintaining a smooth and flat surface suitable for analysis. Here we present a method adapted to the preparation of ultrathin layers grown on pure Si substrates. It consists in a mechanical polishing up to a few remaining microns, followed by a dedicated wet etch. This method can be operated in a routine fashion and yields an extremely flat and smooth surface, without any remaining Si from substrate. It therefore allows precise analysis of the layers of interests with various characterization techniques.
© EDP Sciences, 2011
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.