| Issue |
Eur. Phys. J. Appl. Phys.
Volume 55, Number 3, September 2011
|
|
|---|---|---|
| Article Number | 31001 | |
| Number of page(s) | 8 | |
| Section | Instrumentation and Metrology | |
| DOI | https://doi.org/10.1051/epjap/2011110191 | |
| Published online | 18 August 2011 | |
https://doi.org/10.1051/epjap/2011110191
Advanced backside sample preparation for multi-technique surface analysis
1
CEA-Leti, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
2
CEA-INAC/UJF-Grenoble 1 UMR-E, SP2M, LEMMA, Minatec, Grenoble Cedex 38054, France
3
LTM-CNRS/CEA-LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
4
ST Microelectronics, 850 rue de Jean Monnet, 38926 Crolles, France
a e-mail: matthieu.py.0@gmail.com
Received:
26
April
2011
Accepted:
10
June
2011
Published online:
18
August
2011
Backside sample preparation is a well-known method to help circumvent undesired effects and artifacts in the analysis of a sample or device structure. However it remains challenging in the case of thin layers analysis since only a fraction oRelax;f the original sample must remain while removing most or all of the substrate and maintaining a smooth and flat surface suitable for analysis. Here we present a method adapted to the preparation of ultrathin layers grown on pure Si substrates. It consists in a mechanical polishing up to a few remaining microns, followed by a dedicated wet etch. This method can be operated in a routine fashion and yields an extremely flat and smooth surface, without any remaining Si from substrate. It therefore allows precise analysis of the layers of interests with various characterization techniques.
© EDP Sciences, 2011
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