Eur. Phys. J. Appl. Phys.
Volume 55, Number 3, September 2011
|Number of page(s)||3|
|Section||Surfaces and Interfaces|
|Published online||18 August 2011|
Growth of GaAs/AlxGa1−xAs layers by LPE method and their characterization by SIMS
Physics Department, Islamic Azad University, Kermanshah Branch, Kermanshah, Islamic Republic of Iran
2 Young Researchers Club, Kermanshah Branch, Islamic Azad University, Kermanshah, Islamic Republic of Iran
3 Water and Energy Research Center, Sharif University of Technology, Tehran, Islamic Republic of Iran
a e-mail: firstname.lastname@example.org
Accepted: 2 May 2011
Published online: 18 August 2011
Growth of thin layers of compound semiconductors such as GaAs and Alx Ga1−x As was obtained by Liquid Phase Epitaxy (LPE) at 838–828 ° C in thickness range of 0.1–4.3 μm which was estimated by Scanning Electron Microscopy (SEM). By Secondary Ion Mass Spectroscopy (SIMS) measurements, type of impurity atoms and their density and uniformity with respect to thickness were measured. In this way we are sure that variation of impurity atoms such as Si, Te, Sn and Ge indicates that epilayers were formed uniformly and it demonstrated that the LPE growth was a suitable way to obtain a good quality of epitaxy layers. Amount of composition parameter x in the compound semiconductor AlxGa1−xAs was measured which varies from 0.13 to 0.4. In-depth profiles of SIMS indicated that Al atom can be replaced by Ga atom in the GaAs crystalline structure.
© EDP Sciences, 2011
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