Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||177 - 179|
|Published online||15 July 2004|
Effect of rare earth addition on GaAs-based layers grown by liquid phase epitaxy
Carat Scientific Company, Lviv, Ukraine
2 Physical and Technological Research and Certification Center “Microanalytics”, Kyiv, Ukraine
3 V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, prospect Nauki 45, Kiev, 03028, Ukraine
Corresponding author: firstname.lastname@example.org
Accepted: 15 December 2003
Published online: 15 July 2004
Photoluminescence and electrical measurements were carried out for studying the influence of rare-earth elements (Yb) concentration in the Ga melt on the electronic and structural properties of LPE GaAs epilayers. It was shown that at low concentration the main role of Yb is the gettering of residual impurities in the melt. At the same time, Yb addition in the melt changes the heterogeneous equilibrium by changing the stoichiometry of epilayers (increase of ). But at further increase of Yb concentration in the melt Yb begins to enter in the Ga-sublattice and cluster with deviation from the stoichiometry. An optimum concentration of Yb exists at which high-purity and stoichiometric epilayers for a device application can be obtained.
PACS: 61.72.Vv – Doping and impurity implantation in III-V and II-VI semiconductors / 76.30.Kg – Rare-earth ions and impurities / 81.05.Ea – III-V semiconductors / 81.15.Lm – Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
© EDP Sciences, 2004
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