| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 177 - 179 | |
| Section | Electrical properties | |
| DOI | https://doi.org/10.1051/epjap:2004135 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004135
Effect of rare earth addition on GaAs-based layers grown by liquid phase epitaxy
1
Carat Scientific Company, Lviv, Ukraine
2
Physical and Technological Research and Certification Center
“Microanalytics”, Kyiv, Ukraine
3
V. Lashkaryov Institute of Semiconductor Physics, National Academy
of Sciences of Ukraine,
prospect Nauki 45, Kiev, 03028, Ukraine
Corresponding author: alex_tenet@rambler.ru
Received:
4
July
2003
Accepted:
15
December
2003
Published online: 15 July 2004
Photoluminescence and electrical measurements
were carried out for studying the influence of rare-earth
elements (Yb) concentration in the Ga melt on the
electronic and structural properties of LPE GaAs epilayers.
It was shown that at low concentration the main role of Yb
is the gettering of residual impurities in the melt. At the
same time, Yb addition in the melt changes the
heterogeneous equilibrium by changing the stoichiometry
of epilayers (increase of 
). But at further increase of Yb
concentration in the melt Yb begins to enter in the Ga-sublattice
and cluster with deviation from the
stoichiometry. An optimum concentration of Yb exists at
which high-purity and stoichiometric epilayers for a device
application can be obtained.
PACS: 61.72.Vv – Doping and impurity implantation in III-V and II-VI semiconductors / 76.30.Kg – Rare-earth ions and impurities / 81.05.Ea – III-V semiconductors / 81.15.Lm – Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
© EDP Sciences, 2004
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