Eur. Phys. J. Appl. Phys.
Volume 55, Number 1, July 2011
|Number of page(s)||11|
|Section||Semiconductors and Devices|
|Published online||21 July 2011|
Demonstration of negative signal delay with short-duration transient pulse
IRSEEM, EA 4353, Graduate School of Engineering ESIGELEC, Av. Galilée, BP 10024, 76801 Saint-Étienne-du-Rouvray Cedex, France
Revised: 7 April 2011
Accepted: 16 May 2011
Published online: 21 July 2011
This paper introduces theoretic and experimental analyses of short-duration pulse propagation through a negative group delay (NGD) circuit. The basic analysis method of this electronic circuit operating in baseband and microwave frequencies is investigated. Then, its electrical fundamental characteristics vis-à-vis transient signals are developed. To validate the theoretic concept, planar hybrid devices with one- and two-stage NGD cells were designed, simulated, fabricated and tested. Transient analyses with ultra-wide band (UWB) pulse signals with different widths are realized. Then, experimental results in good agreement with the theoretical predictions were observed. Consequently, group delay going down under −2.5 ns is evidenced in baseband frequency up to 63 MHz with one-stage NGD cell. In time-domain, a Gaussian pulse in advance of about t0 = −1.5 ns or 20% of its half-height time-width was measured. This corresponds to a negative group velocity of about vg = L/t0 = −0.13c (L is the physical length of the tested device and c is light speed in the vacuum). More significant NGD value over 100-MHz bandwidth is stated with two-stage NGD cells. This results in a Gaussian pulse peak advance of about −5 ns (raising a group velocity of about vg = −0.12c) or 31% of its half-height time-width. Finally, some potential applications based on the NGD function are discussed.
© EDP Sciences, 2011
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