| Issue |
Eur. Phys. J. Appl. Phys.
Volume 53, Number 1, January 2011
|
|
|---|---|---|
| Article Number | 10302 | |
| Number of page(s) | 5 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2010100383 | |
| Published online | 23 December 2010 | |
https://doi.org/10.1051/epjap/2010100383
Low temperature electrical transport properties in p-SnSe single crystals
1
Department of Physics, Charotar University of Science and Technology, CHARUSAT, Changa, Anand, 388420, India
2
Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Anand, 388120 Gujarat, India
Corresponding author: cksumesh.cv@ecchanga.ac.in
Received:
4
October
2010
Accepted:
31
October
2010
Published online:
23
December
2010
The electronic transport properties of p-type tin selenide (SnSe) grown by direct vapor transport (DVT) technique were investigated via Hall effect in the temperature range 40 < T < 300 K. The temperature dependence of conductivity revealed the existence of impurity energy level in the band gap of the crystal. The temperature dependence of the carrier concentration was analyzed using the single-donor – single-acceptor model. The Hall mobility increases by decreasing temperature up to 120 K and then decreases along with temperature. The observed temperature dependant mobility in the temperature range 120 < T < 300 K and 40 < T < 120 K was found to be limited by homopolar and ionized impurity mode scatterings respectively.
© EDP Sciences, 2010
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