Eur. Phys. J. Appl. Phys.
Volume 53, Number 1, January 2011
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||23 December 2010|
Low temperature electrical transport properties in p-SnSe single crystals
Department of Physics, Charotar University of Science and Technology, CHARUSAT, Changa, Anand, 388420, India
2 Department of Physics, Sardar Patel University, Vallabh Vidyanagar, Anand, 388120 Gujarat, India
Corresponding author: email@example.com
Accepted: 31 October 2010
Published online: 23 December 2010
The electronic transport properties of p-type tin selenide (SnSe) grown by direct vapor transport (DVT) technique were investigated via Hall effect in the temperature range 40 < T < 300 K. The temperature dependence of conductivity revealed the existence of impurity energy level in the band gap of the crystal. The temperature dependence of the carrier concentration was analyzed using the single-donor – single-acceptor model. The Hall mobility increases by decreasing temperature up to 120 K and then decreases along with temperature. The observed temperature dependant mobility in the temperature range 120 < T < 300 K and 40 < T < 120 K was found to be limited by homopolar and ionized impurity mode scatterings respectively.
© EDP Sciences, 2010
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.