Eur. Phys. J. Appl. Phys.
Volume 51, Number 1, July 2010
|Number of page(s)||6|
|Section||Semiconductors and Devices|
|Published online||17 June 2010|
Role of Cu additive on the dielectric relaxation of Se75Te25 and Se85Te15 glassy alloys
Department of Physics, Christ Church College, Kanpur, 208001, India
Corresponding author: firstname.lastname@example.org
Revised: 8 April 2010
Accepted: 13 April 2010
Published online: 17 June 2010
The effect of Cu additive on the dielectric relaxation of two binary Se-Te glassy systems, comparing the properties of a-Se75Te25, a-Se85Te15 and a-Se75Te15Cu10 alloys has been reported. The temperature and frequency dependence of dielectric parameters in Glassy Se75Te25, Se85Te15 and Se75Te15Cu10 alloys are studied by measuring capacitance and dissipation factor in the frequency range (1 kHz-5 MHz) and temperature range (300-350 K). A Debye like relaxation of dielectric behavior has been observed. A comprehensive study on the relaxation mechanism revealed that the presence of grains and grain boundaries across the pallet thickness is the basic relaxation process. A detailed analysis shows that the observed dielectric loss is in agreement with the Guintini's theory of dielectric dispersion based on two electron hopping over a potential barrier and is applicable in the present case. Dielectric constant (ε’), dielectric loss (ε”), loss tangent (δ) and capacitive reactance (Xc) are found highly frequency and temperature dependent. Dependence of these dielectric parameters over the metallic impurity Cu, has also been found in the present glassy system and has been discussed in terms of electronegativity difference between the elements used in making the aforesaid glassy system.
© EDP Sciences, 2010
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