| Issue |
Eur. Phys. J. Appl. Phys.
Volume 50, Number 1, April 2010
|
|
|---|---|---|
| Article Number | 10301 | |
| Number of page(s) | 4 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2010024 | |
| Published online | 26 February 2010 | |
https://doi.org/10.1051/epjap/2010024
Enhanced light extraction from InGaN/GaN-based light emitting diodes epistructure with ICP-etched nanoisland GaN:Mg surface
1
State Key Lab. of Crystal Materials, Shandong University, Shanda South
Road 27, 250100, Jinan, P.R. China
2
Shandong Huaguang Optoelectronics Company, Ltd., Tianchen Road 1835,
250101, Jinan, P.R. China
Corresponding authors: xphao@sdu.edu.cn xuxg@inspur.com
Received:
17
December
2009
Accepted:
8
January
2010
Published online:
26
February
2010
A simple and effective method is presented to fabricate surface-roughened InGaN/GaN-based light emitting diodes (LEDs) epistructure using annealing-formed, random-distributed Au particle arrays as dry etching mask. The shapes of GaN nanoislands, with horizontal diameters of 100–500 nm and vertical depths up to 140 nm, are determined by Au mask particles. Importantly, this roughened surface exhibits strong photoluminescence (PL) light-output enhancement by a factor of more than 1.6 orders of magnitude. This method will put forward new promising applications in the electroluminescent devices, especially in solid state lighting.
© EDP Sciences, 2010
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