Eur. Phys. J. Appl. Phys.
Volume 46, Number 2, May 2009
|Number of page(s)||4|
|Section||Semiconductors and Devices|
|Published online||27 March 2009|
Concept of new photodetector based on single electron transistor for single charge detection
Laboratoire de Microélectronique et Instrumentation, UR/03/13-04, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5019 Monastir, Tunisia
2 Équipe composants électroniques, UR/99/13-22, Institut Préparatoire aux Études d'Ingénieurs de Nabeul (IPEIN), 8000 Merazka, Nabeul, Tunisia
3 Institut des Nanotechnologies de Lyon, Site INSA UMR 5270, Bât. Blaise Pascal, 7 av. Jean Capelle, 69621 Villeurbanne Cedex, France
Corresponding author: firstname.lastname@example.org
Accepted: 19 January 2009
Published online: 27 March 2009
In this paper, we present a model proposition of photo-SET (single electron photo-detector) aiming at detecting one by one electrons. In the first part of this work, we present the two blocs of the proposed photo-SET (reading and detection blocs). The device structure presented is consisting of two SETs capacitively coupled. In this model, the first SET (SET1) is supposed to read the charge whereas the detection bloc is represented by the second SET (SET2). In the second part, we investigate the effects of photoexcitation on Id-Vg curves and we present results obtained on the output photo-SET characteristics after variation of power illumination and response time.
PACS: 85.60.Bt – Optoelectronic device characterization, design, and modeling / 85.35.Gv – Single electron devices
© EDP Sciences, 2009
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