| Issue |
Eur. Phys. J. Appl. Phys.
Volume 50, Number 2, May 2010
|
|
|---|---|---|
| Article Number | 20302 | |
| Number of page(s) | 5 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2010037 | |
| Published online | 31 March 2010 | |
https://doi.org/10.1051/epjap/2010037
Study of photogenerated traps in nanopixels by random telegraph signal and low frequency noise
1
Laboratoire de Microélectronique et Instrumentation (UR/03/13-04), Faculté des Sciences de Monastir, Avenue de l'Environnement, 5019 Monastir, Tunisia
2
Équipe Composants Électroniques (UR/99/13-22), Institut Préparatoire aux Études d'Ingénieurs de Nabeul (IPEIN), 8000 Merazka, Nabeul, Tunisia
3
Institut des Nanotechnologies de Lyon (site INSA UMR 5270), Institut National des Sciences Appliquées de Lyon (INL), Bât. Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex, France
Corresponding author: manel.troudi@ipein.rnu.tn
Received:
14
November
2009
Accepted:
12
February
2010
Published online:
31
March
2010
In this work, we present noise analysis in a Single Electron Photo-detector (photo-SET or nanopixel) able to detect one by one electron. We perform the power spectral densities (PSD) of random telegraph signals (RTSs) measured in the dark conditions and under light illumination. Photoinduced RTS can be attributed to the charging of a dot near the current path. From these results, photogenerated traps were identified. It is also found that RTS fluctuations depend on the light wavelength.
© EDP Sciences, 2010
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