Eur. Phys. J. Appl. Phys.
Volume 46, Number 1, April 2009International Symposium on Flexible Organic Electronics (IS-FOE)
|Number of page(s)||5|
|Section||Topical Issue International Symposium on Flexible Organic Electronics (IS-FOE)|
|Published online||10 March 2009|
Doping of poly(3-hexylthiophene) nanofibers: microscopic morphology and electrical properties
Laboratory for Chemistry for Novel Materials, University of Mons Hainaut/Materia Nova, 20 Place du Parc, 7000 Mons, Belgium
2 Molecular Nanostructures and Devices group, Institute for Electronics, Microelectronics and Nanotechnology (IEMN), CNRS, Avenue Poincaré, BP 60069, 59652 Cedex, Villeneuve d'Ascq, France
Corresponding author: firstname.lastname@example.org
Accepted: 18 December 2008
Published online: 10 March 2009
The microstructure of thin deposits of poly(3-hexylthiophene) on silicon surfaces is investigated as a function of the solution concentration, the maturation time and the solvent nature, with the aim of generating one monolayer of P3HT nanofibers on the surface. These films are then exposed to a NOPF6 solution, in order to oxidize the conjugated system and to produce conducting nanostructures. The effect of the chemical doping on the microscopic morphology and the electrical properties is analyzed on the basis of AFM and I-V measurements.
PACS: 82.35.Cd – Conducting polymers / 87.64.Dz – Scanning tunneling and atomic force microscopy / 81.07.Nb – Molecular nanostructures
© EDP Sciences, 2009
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