Raman spectroscopy of Si nanoparticles embedded in silica films

Institut des NanoSciences de Paris – UMR 7588, Université Pierre et Marie Curie – Paris 6 et 7, 140 rue de Lourmel, 75015 Paris, France

Corresponding author: ingrid.stenger@polytechnique.edu

Received: 8 April 2008
Revised: 6 June 2008
Accepted: 10 June 2008
Published online: 6 August 2008

Abstract

The formation of crystalline silicon nanoparticles was investigated by means of Raman spectroscopy. SiO_x (x = 1 and x = 1.5) films deposited by electron-gun evaporation onto silica substrates were submitted to post-deposition thermal treatments at 1000 and 1100 °C for various times. From lineshape analysis of the Raman band, it appeared that the crystalline volume fraction never excessed 30% for annealing at 1000 °C, while the mean diameter remained almost constant. Complete crystallisation was achieved after annealing at 1100 °C, accompanied by an increase of the nanoparticle size. Mean diameters of the nanoparticles obtained from Raman spectra analysis along the two main confinement models, Richter et al., Campbell, Fauchet model and bond-polarizability model, were discussed and compared to values deduced from transmission electron microscopy measurements.