| Issue |
Eur. Phys. J. Appl. Phys.
Volume 48, Number 2, November 2009
|
|
|---|---|---|
| Article Number | 20502 | |
| Number of page(s) | 5 | |
| Section | Surfaces, Interfaces and Films | |
| DOI | https://doi.org/10.1051/epjap/2009140 | |
| Published online | 17 September 2009 | |
https://doi.org/10.1051/epjap/2009140
Some aspects of pulsed laser deposition of Si nanocrystalline films
Institute of Solid State Physics, University of Latvia, Kengaraga st. 8, 1063 Riga, Latvia
Corresponding author: boris.polyakov@cfi.lu.lv
Received:
8
April
2009
Accepted:
3
June
2009
Published online:
17
September
2009
Nanocrystalline silicon films were deposited by a picosecond laser ablation on different substrates in vacuum at room temperature. A nanocrystalline structure of the films was evidenced by atomic force microscopy (AFM), optical and Raman spectroscopies. A blue shift of the absorption edge was observed in optical absorption spectra, and a decrease of the optical phonon energy at the Brillouin zone centre was detected by Raman scattering. Early stages of nanocrystalline film formation on mica and HOPG substrates were studied by AFM. Mechanism of nanocrystal growth on substrate is discussed.
PACS: 52.38.Mf – Laser ablation / 68.55.A – Nucleation and growth / 78.67.Bf – Nanocrystals and nanoparticles
© EDP Sciences, 2009
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