Eur. Phys. J. Appl. Phys.
Volume 34, Number 2, May 2006
15th International Colloquium on Plasma processes (CIP 2005)
|Page(s)||147 - 150|
|Section||Plasma, Discharge and Processes|
|Published online||25 May 2006|
Post-annealed silicon nanocrystal formation on substoichiometric SiOxNy (x < 2, y < 1) layers deposited in SiH4-N2O radiofrequency discharges
LGET, 118 route de Narbonne, 31062 Toulouse, France
2 CEMES, 29 rue J. Marvig, 31055 Toulouse, France
Corresponding author: firstname.lastname@example.org
Revised: 18 January 2006
Accepted: 24 February 2006
Published online: 25 May 2006
In this work is presented a detailed physicochemical, structural and optical characterization of SiOxNy thin films. The films deposited using PECVD in SiH4-N2O-He discharges were thermally annealed at 1273 K for 1 hour in ambient nitrogen. The film stochiometry was measured by Rutherford Backscattering Spectroscopy. The chemical composition was dominated by silicon suboxide containing some Si-N and Si-H bonds. Raman scattering measurements suggest the formation of nanocrystallite silicon in the annealed films. The Raman observation is strongly supported by Transmission Electron Microscopy analysis which shows a high density of silicon nanocrystals, having a mean radius ranging between 3 and 6 nm. Using Spectroscopic Ellipsometry, we discussed the dielectric function evolution as a function of the deposition parameters.
PACS: 52.77.-j – Plasma applications / 78.67.Bf – Nanocrystals and nanoparticles / 82.80.Yc – Rutherford backscattering (RBS), and other methods of chemical analysis / 82.80.Gk – Analytical methods involving vibrational spectroscopy / 68.37.Lp – Transmission electron microscopy (TEM)
© EDP Sciences, 2006
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