Eur. Phys. J. Appl. Phys.
Volume 40, Number 3, December 2007
|Page(s)||253 - 256|
|Section||Semiconductors and Related Materials|
|Published online||13 December 2007|
Numerical simulation of silicon based solar cells with a degenerated SnO2:F window layer
Laboratoire des Cellules Photovoltaïques, Unité de Développement de la Technologie du Silicium – UDTS, 2 Bd F. Fanon, BP 140, Alger-7 merveilles, 16200 Alger, Algeria
Corresponding author: firstname.lastname@example.org
Revised: 26 August 2007
Accepted: 30 August 2007
Published online: 13 December 2007
The paper presents a numerical simulation of the behaviour of SnO2:F/Si(N+)/Si(P) solar cells. The simulation addresses in particular the question of the role of the window layer SnO2:F for the device performance. As beginning step, the transparent conductive oxide of SnO2:F must be modelled in order to introduce its parameters in simulation codes. Two approaches were employed: one empirical by collecting the experimental data of spray deposited SnO2:F while the second one is theoretical by using models of highly degenerate wide band gap semiconductors. The second step consists in injecting the deduced parameters of fluorine doped tin oxide in simulation codes. We use two well-known photovoltaic simulation codes as PC1D and SCAPS 2.5. A comparative study of the results of structures SnO2:F/Si(N+)/Si(P) and Si(N+)/Si(P) have been done with a confirmation in enhancing the conversion efficiency by SnO2:F window layer addition.
PACS: 71.20.Nr – Semiconductor compounds / 73.43.cd – Theory and modeling
© EDP Sciences, 2007
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