Eur. Phys. J. Appl. Phys.
Volume 87, Number 1, July 2019
|Number of page(s)||8|
|Section||Semiconductors and Devices|
|Published online||13 September 2019|
Modeling of a high performance bandgap graded Pb-free HTM-free perovskite solar cell
Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran
2 Department of Electrical Engineering, Lahijan Branch, Islamic Azad University, Lahijan, Iran
* e-mail: firstname.lastname@example.org
Received in final form: 25 April 2019
Accepted: 25 July 2019
Published online: 13 September 2019
In this study, a lead-free nontoxic and hole transport material (HTM)-free perovskite solar cell (PSC) with a novel configuration of glass/FTO/ZnO/CH3NH3SnI3−xBrx/back contact has been modeled and optimized by a solar cell capacitance simulator (SCAPS). The bandgap of CH3NH3SnI3−xBrx absorber is tuned in the range of 1.3 eV to 2.15 eV by variation of the Br doping content. To make a comparison, an optimized Pb-based PSC is also modeled. By optimizing the parameters, power conversion efficiency (PCE) of 16.30%, open circuit voltage (Voc) of 1.02 V, short circuit current density (Jsc) of 22.23 mA/cm2, and fill factor (FF) of 0.72 were obtained. As compare to the reports available in the literature, these results show much improvement and can provide guidelines for production of economic and environmentally friendly PSCs with further efficiency enhancement.
© EDP Sciences, 2019
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