| Issue |
Eur. Phys. J. Appl. Phys.
Volume 38, Number 1, April 2007
|
|
|---|---|---|
| Page(s) | 27 - 30 | |
| Section | Nanomaterials and Nanotechnologies | |
| DOI | https://doi.org/10.1051/epjap:2007045 | |
| Published online | 22 February 2007 | |
https://doi.org/10.1051/epjap:2007045
Ge nanoparticles based MOS structure and their Raman characterization
Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi – 110 067, India
Corresponding author: ybatra@iuac.res.in
Received:
18
December
2006
Accepted:
24
January
2007
Published online:
22
February
2007
Charge retention properties of Ge nanoparticles embedded in SiO2 matrix are investigated. Formation of embedded Ge nanoparticles was accomplished by optimizing electron beam evaporation process. Size of Ge nanoparticles has been characterized by atomic force microscopy (AFM) which comes out to be ~15 nm. Presence of Ge nanoparticles is confirmed by micro-Raman analysis. Memory effect of Ge nanoparticles is verified by capacitance-voltage (C-V) measurements which show hysteresis in the C-V curves.
PACS: 73.21.La – Quantum dots / 73.40.Qv – Metal-insulator-semiconductor structures / 78.30.-j – Infrared and Raman spectra
© EDP Sciences, 2007
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