Eur. Phys. J. Appl. Phys.
Volume 38, Number 1, April 2007
|Page(s)||27 - 30|
|Section||Nanomaterials and Nanotechnologies|
|Published online||22 February 2007|
Ge nanoparticles based MOS structure and their Raman characterization
Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi – 110 067, India
Corresponding author: firstname.lastname@example.org
Accepted: 24 January 2007
Published online: 22 February 2007
Charge retention properties of Ge nanoparticles embedded in SiO2 matrix are investigated. Formation of embedded Ge nanoparticles was accomplished by optimizing electron beam evaporation process. Size of Ge nanoparticles has been characterized by atomic force microscopy (AFM) which comes out to be ~15 nm. Presence of Ge nanoparticles is confirmed by micro-Raman analysis. Memory effect of Ge nanoparticles is verified by capacitance-voltage (C-V) measurements which show hysteresis in the C-V curves.
PACS: 73.21.La – Quantum dots / 73.40.Qv – Metal-insulator-semiconductor structures / 78.30.-j – Infrared and Raman spectra
© EDP Sciences, 2007
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.