Eur. Phys. J. Appl. Phys.
Volume 37, Number 3, March 2007
|Page(s)||257 - 260|
|Section||Semiconductors and Related Materials|
|Published online||22 February 2007|
Thermoelectric properties and mobility activation energy of amorphous As20Se80−xTlx films
Physics Department Faculty of Sciences South Valley University, 6 Kilo Road, 83523, Qena, Egypt
2 Physics Department Faculty of Education Ain Shams University, Cairo, Egypt
Corresponding author: firstname.lastname@example.org
Revised: 9 December 2006
Accepted: 15 January 2007
Published online: 22 February 2007
Thermal evaporation technique was used to prepare As20Se80−xTlx films from bulk materials; ( at.%). The effect of TI addition on the thermoelectric properties and mobility activation energy of As-Se-Tl chalcogenide semiconductors has been studied in the homogeneous glass-forming region through temperature range (300–380 K). The thermoelectric power, TEP had a positive sign over the whole temperature range investigated, indicating p-type conductivity for As20Se80−xTlx films. TEP activation energy, could be calculated from TEP measurements. It was found that decreases with increasing Tl-content and is found to vary between 0.814 and 0.517 eV. The mobility activation energy, could be calculated.
PACS: 61.43.Dq – Amorphous semiconductors, metals, and alloys / 72.15.Jf – Thermoelectric and thermomagnetic effects / 71.20.Gj – Other metals and alloys / 71.30.+h – Metal-insulator transitions and other electronic transitions
© EDP Sciences, 2007
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.