Eur. Phys. J. Appl. Phys.
Volume 36, Number 3, December 2006
|Page(s)||271 - 279|
|Section||Characterization of Materials: Imaging, Microscopy and Spectroscopy|
|Published online||15 November 2006|
Analytical description of mirror plot in insulating target
LaMaCop, Faculté des sciences de Sfax, Route Soukra Km 3, BP 802, CP 3038 Sfax, Tunisia
2 CEA, Direction des applications Militaires, Bât. DAM, BP 12, 91680 Bruyères-Le-Châtel, France
3 IREENA (EA 1770), Université de Nantes – Nantes Atlantique University, 2 rue de la Houssinière, BP 92208, 44322 Nantes Cedex 3, France
Corresponding author: email@example.com
Revised: 2 June 2006
Accepted: 21 August 2006
Published online: 15 November 2006
A method has been developed to link the geometry of the trapped charge distribution within irradiated insulators to the mirror plot shape, in a scanning electron microscope. We give a detailed analysis of the geometrical optic approximation which is used to evaluate the mirror image formation. We establish then analytical mirror relations obtained for diverse trapped charge distributions such as homoïdal charge distribution, bipunctual and cylindrical ones. Knowledge of the charge distribution first moments enables us to investigate then their effect on the first terms of the mirror expression limited development. Finally, we apply these analytical expressions to evaluate certain characteristics of the charge distribution from an experimental mirror plot.
PACS: 72.80.Sk – Insulators / 68.37.Hk – Scanning electron microscopy (SEM) (including EBIC) / 72.20.Jv – Charge carriers: generation, recombination, lifetime, and trapping
© EDP Sciences, 2006
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