Eur. Phys. J. Appl. Phys.
Volume 33, Number 3, March 2006
|Page(s)||153 - 159|
|Section||Semiconductors and Related Materials|
|Published online||22 February 2006|
High-density microwave plasma of SiH4/H2 for high rate growth of highly crystallized microcrystalline silicon films
Department of Functional Materials Science,
Graduate School of Science and Technology, Saitama University,
255 Shimo-Okubo, Sakura, Saitama 338-8570, Japan
Corresponding author: firstname.lastname@example.org
Revised: 14 October 2005
Accepted: 17 October 2005
Published online: 22 February 2006
The plasma parameters for the fast deposition of highly crystallized microcrystalline silicon (µc-Si) films with low defect density are presented using a high-density and low-temperature SiH4-H2 mixture microwave plasma. A very high deposition rate of 65 Å/s was achieved for a SiH4 concentration of 67% diluted in H2 with a high Raman crystallinity Ic/Ia > 2.5 and a low defect density of 1−2 × 1016 cm−3 by adjusting the plasma conditions. Contrary to the case of a conventional rf plasma, the defect density of the µc-Si films strongly depends on substrate temperature, Ts, and increases with increasing Ts even if Ts is below 300 °C. This indicates that the real temperature at the growing surface is higher than the monitored value. A sufficient supply of deposition precursors such as SiH3 at the growing surface under an appropriate ion bombardment is effective for the fast deposition of highly crystallized µc-Si films as well as for the suppression of the amorphous incubation and transition interface layers at the initial growth stage.
PACS: 72.80.Cw – Elemental semiconductors / 52.50.Dg – Plasma sources / 68.55.-a – Thin film structure and morphology
© EDP Sciences, 2006
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