| Issue |
Eur. Phys. J. Appl. Phys.
Volume 62, Number 1, April 2013
|
|
|---|---|---|
| Article Number | 10301 | |
| Number of page(s) | 7 | |
| Section | Thin Films | |
| DOI | https://doi.org/10.1051/epjap/2013120345 | |
| Published online | 20 March 2013 | |
https://doi.org/10.1051/epjap/2013120345
Analytical calculation of site and surface reaction probabilities of SiHx radicals in PECVD process
Laboratoire LRPPS, Faculté des Sciences et de la Technologie et des Sciences de la Matière, Université Kasdi Merbah Ouargla, Ouargla 30000, Algeria
a e-mail: fethi.khelfaoui@gmail.com; khelfaoui.fe@univ-ouargla.dz
Received:
29
August
2012
Accepted:
25
January
2013
Published online:
20
March
2013
In this work we present a theoretical and mathematical relationship which calculates the site reaction probability (SRP) of the sticking on (Si-) dangling bonds (DB) or the SRP to abstract H from (Si-H) bonds, on the a-Si:H surface. The results are in agreement with those obtained by the Monte Carlo simulation. Using these probabilities allowed us to compute the surface reaction probability of SiHx radicals on a-Si:H for several values of the temperature. The surface reaction probability (SFRP) results show also an excellent agreement with other works found in the literature.
© EDP Sciences, 2013
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