Eur. Phys. J. Appl. Phys.
Volume 30, Number 3, June 2005
|Page(s)||167 - 169|
|Section||Organic Materials and Devices|
|Published online||14 April 2005|
High-performance InP/InGaAs pnp δ-doped heterojunction bipolar transistor
Department of Physics, National Kaohsiung Normal University
116, Ho-ping 1st Road, Kaohsiung, Taiwan, Republic of China
Corresponding author: firstname.lastname@example.org
Revised: 25 November 2004
Accepted: 21 January 2005
Published online: 14 April 2005
A high-performance InP/InGaAs -doped pnp heterojunction bipolar transistor (HBT) has been first fabricated and demonstrated. The addition of a -doped sheet between two undoped spacer layers effectively eliminates the potential spike at emitter-base junction, lowers the emitter-collector offset voltage, and increases the barrier for electrons, simultaneously. Experimentally, a maximum current gain of 50 and a low offset voltage of 70 mV are obtained, respectively. To our knowledge, the offset voltage of the studied device is the lowest value for the reported InP/InGaAs pnp HBTs.
PACS: 73.61.Ey – III-V semiconductors / 73.40.Kp – III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
© EDP Sciences, 2005
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