Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||141 - 144|
|Section||Defects in silicon|
|Published online||15 July 2004|
Unusual properties of C-T characteristics of hydrogen implanted and annealed Si
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668
2 Institute of Semiconductor Physics SB RAN, pr. Lavrentyeva 13, 630090 Novosibirsk, Russia
Corresponding author: firstname.lastname@example.org
Accepted: 28 January 2004
Published online: 15 July 2004
Cz-Si doped with boron was implanted at room temperature with 130 keV H2-ions at a high dose of 4×1016 cm−2. The specimens were annealed at a temperature of 450 °C for 10 h in argon ambient. High frequency (1 MHz) C-T and C-V measurements in the temperature range 80–400 K were carried out to study particular features of damage-related centres in the limit of a heavy damage. The presence of damage-related deep-level defects manifest themselves through several unusual features of C-T(V) curves. Sudden jumps of capacitance and hysteresis effects during sweeping temperature/voltage are unusual indeed and have been reported for the first time. Our experiments by filling and emptying deep-level defects with carriers by proper biasing diodes before the temperature/voltage sweep have revealed that the particular features are due to changes in the deep level occupation. The results presented give direct experimental evidence that the damage-induced deep-level defects themselves control the quasi-Fermi level position.
PACS: 61.72.Tt – Doping and impurity implantation in germanium and silicon / 61.80.Jh – Ion radiation effects / 81.40.Rs – Electrical and magnetic properties (related to treatment conditions)
© EDP Sciences, 2004
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.