Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||141 - 144|
|Section||Defects in silicon|
|Published online||15 July 2004|
Unusual properties of C-T characteristics of hydrogen implanted and annealed Si
Institute of Electron Technology, Al. Lotnikow 32/46, 02-668
2 Institute of Semiconductor Physics SB RAN, pr. Lavrentyeva 13, 630090 Novosibirsk, Russia
Corresponding author: email@example.com
Accepted: 28 January 2004
Published online: 15 July 2004
Cz-Si doped with boron was implanted at room temperature with 130 keV H2-ions at a high dose of 4×1016 cm−2. The specimens were annealed at a temperature of 450 °C for 10 h in argon ambient. High frequency (1 MHz) C-T and C-V measurements in the temperature range 80–400 K were carried out to study particular features of damage-related centres in the limit of a heavy damage. The presence of damage-related deep-level defects manifest themselves through several unusual features of C-T(V) curves. Sudden jumps of capacitance and hysteresis effects during sweeping temperature/voltage are unusual indeed and have been reported for the first time. Our experiments by filling and emptying deep-level defects with carriers by proper biasing diodes before the temperature/voltage sweep have revealed that the particular features are due to changes in the deep level occupation. The results presented give direct experimental evidence that the damage-induced deep-level defects themselves control the quasi-Fermi level position.
PACS: 61.72.Tt – Doping and impurity implantation in germanium and silicon / 61.80.Jh – Ion radiation effects / 81.40.Rs – Electrical and magnetic properties (related to treatment conditions)
© EDP Sciences, 2004
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