| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 85 - 88 | |
| Section | Nanostructures and near-field probe techniques 1 | |
| DOI | https://doi.org/10.1051/epjap:2004115 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004115
Characteristics of FeSi2 quantum dots on silicon
Research Institute for Technical Physics and Materials Science,
H-1525 P. O. Box 49, Budapest, Hungary
Corresponding author: dozsa@mfa.kfki.hu
Received:
4
July
2003
Accepted:
13
February
2004
Published online: 15 July 2004
Self-assembled β-FeSi2 quantum (QD) dots were grown on n-type Si and investigated in this work. Secondary electron images show the shape and distribution of the quantum dots depends on the temperature and thickness of the Fe deposition. Electrical characteristics were measured in MIS devices prepared by covering the quantum dots by an oxide or by a photoresist layer. The cold deposited and subsequently annealed Fe layers were found to generate large concentration of deep level defects, compensating the upper few microns layer of the silicon wafer. Reactive deposition epitaxy (RDE) growth of QDs – where the iron is deposited on hot substrate—generated much lower concentration of defect, in some devices with characteristics comparable to the reference wafer. The significant scatter on the surface is attributed to inhomogeneous growth conditions and to residual surface contamination on the surface.
PACS: 81.07.Ta – Quantum dots / 71.55.Cn – Elemental semiconductors / 73.40.Qv – Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
© EDP Sciences, 2004
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